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TSI220B1 Fiches technique(PDF) 7 Page - STMicroelectronics

No de pièce TSI220B1
Description  TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
PDF  9 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSI220B1 Fiches technique(HTML) 7 Page - STMicroelectronics

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background image
TSIxxB1
7/9
Type
IRM @VRM
VBO @IBO
IH
IBO
C
note1
note2
note1
note3
µAV
V
mA
mA
mA
pF
max.
max.
min.
min.
max.
typ.
TSI62B1
1
5
50
62
90
150
50
400
200
TSI180B1
1
5
50
180
250
150
50
400
200
TSI200B1
1
5
50
200
290
150
50
400
200
TSI220B1
1
5
50
220
330
150
50
400
200
TSI265B1
1
5
50
265
380
150
50
400
200
Note 1 : Measured at 50 Hz, one cycle
Note 2 : See test cricuit
Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8.
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
1 - PROTECTION DEVICES PARAMETERS
Symbol
Test condition
Value
Unit
VF
(for one diode)
IF =20mA
IF = 100 mA
0.9
1.1
V
V
2 - DIODE BRIDGE PARAMETERS
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
s
1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000
µs.
3) The D.U.T will come back off-state within a duration of 50 ms max.
R
-VP
VBAT =-48 V
Surge generator
D.U.T.



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