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TP65H030G4PRS Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce TP65H030G4PRS
Description  650V SuperGaN® GaN FET in TOLT (source tab)
PDF  17 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

TP65H030G4PRS Fiches technique(HTML) 4 Page - Renesas Technology Corp

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TP65H030G4PRS Datasheet
R07DS1602EU0201 Rev.2.01
Dec 2, 2025
Page 4
2. Specifications
2.1
Absolute Maximum Ratings
Tc = 25°C unless otherwise stated.
Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions can adversely impact product reliability and result in failures not covered by warranty.
Symbol
Parameter
Minimum
Maximum
Unit
VDSS
Drain to source voltage (TJ = -55°C to 150°C)
-
650
V
VDSS(TR) , non-repetitive
Transient drain to source voltage, non-repetitive [1]
-
800
VDSS(TR) , repetitive
Transient drain to source voltage, repetitive [2]
-
750
VGSS
Gate to source voltage
-20
+20
PD
Maximum power dissipation at TC = 25°C
-
192
W
ID
Continuous drain current at TC = 25°C
-
55.7
A
Continuous drain current at TC = 100°C
-
35
A
IDM
Pulsed drain current (pulse width: 10µs)
-
230
A
TJ
Operating temperature junction
-55
+150
°C
TS
Storage temperature
-55
+150
°C
TSOLD
Reflow soldering temperature [3]
-
260
°C
1.
In off-state, spike duration < 30µs, non-repetitive.
2.
Off-state, spike duration < 5µs.
3.
Reflow MSL3.
2.2
Thermal Specifications
Symbol
Condition
Typical Value
Unit
RΘJC
Junction-to-case
0.65
°C/W
RΘJA
Junction-to-ambient
40



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