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TN2540-12G Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TN2540-12G Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Thyristors TN2540-12G www.iscsemi.com 2 THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VD=VDRM -- 10 uA IDRM Repetitive peak off-state current VD=VDRM -- 10 uA dv/dt Critical Rate of Rise of Off-state Voltage VD= 67%VDRM, Tj= 125℃ 1500 -- V/us IH Holding Current IT= 500mA -- 80 mA IL Latching Current IG= 1.2×IGT -- 90 mA IGT Gate trigger current VD= 12V, RL= 3.3kΩ 4.0 40 mA VGT Gate trigger voltage all quadrant -- 1.3 V VTM On-state Voltage ITM = 50 A, tp = 380 µs -- 1.6 V VTO Threshold Voltage Tj= 125℃ -- 0.85 V PACKAGE OUTLINE Dimensions in mm SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W |
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