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AT41532 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce AT41532
Description  isc Silicon NPN Power Transistor
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

AT41532 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  AT41532 Datasheet HTML 1Page - Inchange Semiconductor Company Limited AT41532 Datasheet HTML 2Page - Inchange Semiconductor Company Limited AT41532 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISB3013
eq AT41532
isc Silicon NPN Power Transistor
www.iscsemi.com
2023-10-10
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO= 12V(Min)
APPLICATIONS
·
Designed for power amplifier
·
high speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation
225
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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