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AT32032 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce AT32032
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

AT32032 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
AT32032
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 5.5V(Min)
· SO-T323 Package
APPLICATIONS
· PDC, PHS, CDMA
· Communication Terminal
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
11
V
VCEO
Collector-Emitter Voltage
5.5
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
32
mA
PT
Total Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNI
T
V(BR)CBO
Collector-Baser Breakdown Voltage
IC= 1uA, IB= 0A
11
--
--
V
ICBO
Collector-Base Cut-Off Current
VCB= 3V
--
--
2.0
uA
IEBO
Emitter Cutoff Current
VEB= 1V
--
--
5.0
uA
hFE
DC Current Gain
IC= 5mA, VCE= 2.7V
70
--
300


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