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ADRF5238BCRZN-R7 Fiches technique(PDF) 5 Page - Analog Devices

No de pièce ADRF5238BCRZN-R7
Description  High Isolation, Silicon SPDT, Nonreflective Switch, 0.1GHz to 13GHz
PDF  13 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

ADRF5238BCRZN-R7 Fiches technique(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5238
SPECIFICATIONS
analog.com
Rev. 0 | 5 of 13
Table 2. Electrical Characteristics for VDD = 3.3V (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
Current
Low
IINL
VEN and VCTRL = 0V, VDD = 3.3V
<1
µA
High
IINH
VCTRL = 3.3V, VDD = 3.3V
<1
µA
VEN = 3.3V, VDD = 3.3V
<7
µA
RECOMMENDED OPERATING CONDITONS
Supply Voltage
VDD
3.15
3.3
3.45
V
RF Input Power 2
PIN
f = 100MHz to 10GHz, TCASE = 85°C3
Through Path
RF signal is applied to RFC or through connected RF
throw port (selected RFx)
Average
33
dBm
Peak4
33
dBm
Terminated Path
RF signal is applied to the unselected RFx port
Average
26
dBm
Peak
28.5
dBm
Hot Switching (RFC)
RF signal is applied to RFC while switching between
RFx ports
Average
31
dBm
Peak
31
dBm
Hot Switching (RFx)
RF signal is applied to RFx port while switching
Average
26
dBm
Peak
28.5
dBm
Case Temperature
TCASE
−40
+105
°C
1 For input linearity performance over frequency, see Figure 13 to Figure 16.
2 For power derating over frequency, see the Power Derating Curves section.
3 For 105°C operation, the average power handling degrades 3dB, and the peak power handling degrades 1dB from the TCASE = 85°C specifications.
4 Peak: ( ≤100 ns pulse duration, 5% duty cycle).



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