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STTH8R02D-Y Fiches technique(PDF) 3 Page - STMicroelectronics |
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STTH8R02D-Y Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STTH8R02D-Y Characteristics DocID029557 Rev 2 3/10 For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode Table 5: Dynamic electrical characteristics per diode (Tj = 25 °C, unless otherwise specified) Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 1 A dIF/dt = - 50 A/μs VR = 30 V - 23 30 ns IF = 1 A dIF/dt = - 100 A/μs VR = 30 V - 15 20 IRM Reverse recovery current IF = 4 A dIF/dt = - 200 A/μs VR = 160 V Tj = 125 °C - 4.6 6.0 A Qrr Reverse recovery charge - 65 nC VFP Forward recovery voltage IF = 4 A dIF /dt = 50 A/μs VFR = 1.1 x VF (max) - 1.6 V tfr Forward recovery time - 80 ns |
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