STTH112-Y datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

1.1

Electrical characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

PF(AV)(W)

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ=tp/T

IF(AV)(A)

Figure 2. Forward voltage drop versus forward current

(typical values)

IF(A)

0.01

0.10

1.00

10.00

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

Tj = 150 °C

VF(V)

Tj = 25 °C

Figure 3. Forward voltage drop versus forward current

(maximum values)

0.01

0.10

1.00

10.00

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

IF(A)

Tj = 150 °C

VF(V)

Tj = 25 °C

Figure 4. Relative variation of thermal impedance junction

to lead versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1. E-04

1. E-03

1. E-02

1. E-01

1. E+00

1. E+01

Single pulse

SMBflat

tp(s)

Zth(j-l)/Rth(j-l)

Figure 5. Junction capacitance versus reverse voltage

applied (typical values)

C (pF)

100

1000

10000

VR(V)

MHz

= 1

VOSC = 30 mVRMS

Tj = 25 °C

Figure 6. Thermal resistance junction to ambient versus

copper surface under each lead

120

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Rth(j-a)(°C/W)

SMB-Flat

SCu(cm²)

Epoxy printed board FR4, copper thickness: 70 μm

STTH112-Y

Characteristics

DS10171 - Rev 3

page 3/8

STTH112-Y Fiches technique(PDF) 3 Page - STMicroelectronics

STTH112-Y Fiches technique(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL