 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
STPS20120C Fiches technique(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STPS20120C Fiches technique(HTML) 3 Page - STMicroelectronics |
|
|
3 / 14 page  DocID11212 Rev 4 3/14 STPS20120C Characteristics 14 Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6. Junction capacitance vs. reverse voltage applied (typical values, per diode) |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
