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MSC080SMA120B Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce MSC080SMA120B
Description  SiC N-Channel MOSFET
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MSC080SMA120B Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  MSC080SMA120B Datasheet HTML 1Page - Inchange Semiconductor Company Limited MSC080SMA120B Datasheet HTML 2Page - Inchange Semiconductor Company Limited MSC080SMA120B Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCF8113
eq MSC080SMA120B
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
High Blocking Voltage with Low On-Resistance
·
RDS(ON)= 80mΩ（TYP.）@VGS= 20V TJ=25℃
·
High Speed Switching with Low Capacitance
·
Easy to Parallel and Simple to Drive
APPLICATIONS
·
Solar Inverters
·
Switch Mode Power Supplies
·
DC-DC Converters
·
Motor drives
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGSS
Gate-Source Opetation Voltage
-10/+25
V
ID
Drain Current-Continuous
30
A
Drain Current-Continuous@Tc=100℃
22
A
IDM
Drain Current-Single Pluse
75
A
PD
Total Dissipation @TC=25℃
165
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.91
℃
/W


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