FERD20U50 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (anode terminals short circuited)

PF(AV)(W)

IF(AV)(A)

δ=tp/T

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, anode terminals short circuited)

IF(AV) (A)

100

125

150

Rth(j-a) = Rth(j-c)

Tamb(°C)

δ=tp/T

Figure 3. Relative variation of thermal impedance junction

to case versus pulse duration

Z th(j -c) / Rth( j- c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

t p (s)

Single pulse

Figure 4. Reverse leakage current versus reverse voltage

applied (typical values)

IR( A )

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

V R(V)

Tj = 125 °C

Tj = 50 °C

Tj = 75 °C

Tj = 100 °C

Tj = 25 °C

Figure 5. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

100

1000

10000

100

F = 1 MHz

Vosc= 30 mVRMS

Tj = 25 °C

VR (V)

Figure 6. Forward voltage drop versus forward current

(typical values, anode terminals short circuited)

IF(A)

0.1

1.0

10.0

100.0

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

VF(V)

Tj = 25 °C

Tj = 125 °C

Tj = 75 °C

FERD20U50

Characteristics (curves)

DS10223 - Rev 5

page 3/9

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