STPS2L25AFN datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values)

I (mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

V (V)

T =150°C

T =25°C

T =100°C

T =125°C

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

100

1000

100

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Figure 7. Forward voltage drop versus forward current

(high level)

I (A)

V (V)

Tj =125°C

(maximum values)

Tj =125°C

(typical values)

Tj =25°C

(maximum values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.1

1.0

10.0

Figure 8. Forward voltage drop versus forward current

(low level)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I (A)

V (V)

Tj =125°C

(maximum values)

Tj =125°C

(typical values)

Tj =25°C

(maximum values)

Figure 9. Forward voltage drop versus forward current

(typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.10

1.00

10.00

I (A)

V (V)

T =25°C

T =125°C

T =150°C

Figure 10. Thermal resistance junction to ambient versus

copper surface under each lead

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

(°C/W)

th(j-a)

SMB

S(Cu)(cm²)

Epoxy p ri nted ci rcuit board FR4, coppe r t hickness: 35 µm

STPS2L25

Characteristics (curves)

DS1245 - Rev 7

page 4/12

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