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STM32L151VDH6D Fiches technique(PDF) 88 Page - STMicroelectronics

No de pièce STM32L151VDH6D
Description  Ultra-low-power 32-bit MCU ARM® Cortex®-M3, 384KB Flash, 48KB SRAM, 12KB EEPROM, LCD, USB, ADC, DAC, memory I/F
PDF  154 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L151VDH6D Fiches technique(HTML) 88 Page - STMicroelectronics

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Electrical characteristics
STM32L151xD STM32L152xD
88/154
DocID022027 Rev 11
Flash memory and data EEPROM
Table 35. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming/ erasing
time for byte / word /
double word / half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 36. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
Typ Max
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
--
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at TA = 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
-
-



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