Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

Preview PDF HTML

CSD87331Q3D Fiches technique(PDF) 4 Page - Texas Instruments

No de pièce CSD87331Q3D
Description  CSD87331Q3D Synchronous Buck NexFET™ Power Block
PDF  27 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  TI2 [Texas Instruments]
Site Internet  https://www.ti.com
Logo TI2 - Texas Instruments

CSD87331Q3D Fiches technique(HTML) 4 Page - Texas Instruments

  CSD87331Q3D Datasheet HTML 1Page - Texas Instruments CSD87331Q3D Datasheet HTML 2Page - Texas Instruments CSD87331Q3D Datasheet HTML 3Page - Texas Instruments CSD87331Q3D Datasheet HTML 4Page - Texas Instruments CSD87331Q3D Datasheet HTML 5Page - Texas Instruments CSD87331Q3D Datasheet HTML 6Page - Texas Instruments CSD87331Q3D Datasheet HTML 7Page - Texas Instruments CSD87331Q3D Datasheet HTML 8Page - Texas Instruments CSD87331Q3D Datasheet HTML 9Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 27 page
background image
HD
HG
LG
LD
M0205-01
LS
HS
HD
HG
LG
LD
M0206-01
LS
HS
4
CSD87331Q3D
SLPS283B – SEPTEMBER 2011 – REVISED FEBRUARY 2017
www.ti.com
Product Folder Links: CSD87331Q3D
Submit Documentation Feedback
Copyright © 2011–2017, Texas Instruments Incorporated
5.5 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
Q1 Control FET
Q2 Sync FET
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = 250 µA
30
30
V
IDSS
Drain-to-source leakage
current
VGS = 0 V, VDS = 20 V
1
1
µA
IGSS
Gate-to-source leakage
current
VDS = 0 V, VGS = +10 / –8 V
100
100
nA
VGS(th)
Gate-to-source threshold
voltage
VDS = VGS, IDS = 250 µA
1
2.1
0.8
1.2
V
ZDS(on)
Effective AC on-impedance
VIN = 12 V, VGS = 5 V,
VOUT = 1.3 V, IOUT = 10 A,
ƒSW = 500 kHz,
LOUT = 1 µH
18
5.5
m
Ω
gfs
Transconductance
VDS = 15 V, IDS = 8A
26
48
S
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
432
518
926
1110
pF
COSS
Output capacitance
158
190
378
454
pF
CRSS
Reverse transfer capacitance
7
9
24
30
pF
RG
Series gate resistance
5.2
6.5
0.7
1.5
Ω
Qg
Gate charge total (4.5 V)
VDS = 15 V,
IDS = 8 A
2.7
3.2
6.4
7.7
nC
Qgd
Gate charge gate-to-drain
0.4
1.1
nC
Qgs
Gate charge gate-to-source
0.9
1.5
nC
Qg(th)
Gate charge at Vth
0.5
0.8
nC
QOSS
Output charge
VDS = 14 V, VGS = 0 V
3.6
7.7
nC
td(on)
Turnon delay time
VDS = 15 V, VGS = 4.5 V,
IDS = 8 A, RG = 2 Ω
3.4
3.8
ns
tr
Rise time
4.5
4.7
ns
td(off)
Turnoff delay time
7.4
11.2
ns
tf
Fall time
1.3
2.4
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
IDS = 8 A, VGS = 0 V
0.85
1
0.85
1
V
Qrr
Reverse recovery charge
VDS = 14 V, IF = 8 A,
di/dt = 300 A/µs
4
5.9
nC
trr
Reverse recovery time
10
13
ns
Max RθJA = 80°C/W
when mounted on 1 in2
(6.45 cm2) of 2-oz
(0.071-mm) thick Cu.
Max RθJA = 149°C/W
when mounted on
minimum pad area of
2-oz (0.071-mm) thick
Cu.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27


Fiches technique Télécharger

Go To PDF Page


Lien URL



ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Lien vers la fiche technique    |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com