TSC2012H datasheet(37/49 Pages) STMICROELECTRONICS

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5.11

EMI rejection ratio (EMIRR)

The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of current sensing

device. An adverse effect that is common to many current sensing is a change in the offset voltage as a result of

RF signal rectification. Figure 1 shows the EMIRR on pin IN+, Figure 2 shows the EMIRR on pin IN- of the

TSC2011H measured from 400 MHz up to 2.4 GHz.

Figure 73. EMIRR on pin+

400

600

800 1000 1200 1400 1600 1800 2000 2200 2400

100

120

Vcc=5V, T=25°C

Prf=-10dBm

Frequency (MHz)

Figure 74. EMIRR on pin-

400

600

800 1000 1200 1400 1600 1800 2000 2200 2400

100

120

Vcc=5V, T=25°C

Prf=-10dBm

Frequency (MHz)

Figure 75. EMIRR on pin+ (TSC2010H) shows the EMIRR on pin IN+, Figure 76. EMIRR on pin- (TSC2010H)

shows the EMIRR on pin IN- of the TSC2010H measured from 10 MHz up to 2.4 GHz.

Figure 75. EMIRR on pin+ (TSC2010H)

200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400

100

120

Vcc = 5 V, T = 25°C

Prf = 10 dBm

Frequency (MHz)

Figure 76. EMIRR on pin- (TSC2010H)

200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400

100

120

Vcc = 5 V, T = 25°C

Prf = 10 dBm

Frequency (MHz)

TSC2010H, TSC2011H, TSC2012H

Application information

DS13791 - Rev 2

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