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RFD10P03LSM Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce RFD10P03LSM
Description  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RFD10P03LSM Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc P-Channel MOSFET Transistor
RFD10P03LSM
www.iscsemi.com
1
FEATURES
·Drain Current -ID= -10A@ TC=25℃
·Drain Source Voltage -VDSS= -30V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 0.2Ω(Max)@VGS= -5V
DESCRIPTION
·
DC-to-DC Converter
·
General Industrial Applications
·
Power Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage-Continuous
±
10
V
ID
Drain Current-Continuous
-10
A
IDM
Drain Current-Single Pulse
-40
A
PD
Total Dissipation @TC=25℃
65
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.3
℃
/W


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