BUV26 datasheet(1/4 Pages) STMICROELECTRONICS

No de pièce	BUV26

Description	MEDIUM POWER NPN SILICON TRANSISTOR

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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BUV26

MEDIUM POWER NPN SILICON TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPE

s

NPN TRANSISTOR

s

FAST SWITCHING SPEED

s

LOW COLLECTOR EMITTER SATURATION

APPLICATIONS

s

SWITCHING REGULATORS

s

MOTOR CONTROL

DESCRIPTION

The BUV26 is a Multiepitaxial Planar NPN

Transistor in TO-220 package. It is intended for

use in high frequency and efficency converters,

switching regulators and motor control.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-base Voltage (IE = 0)

180

V

VCEO

Collector-Emitter Voltage (IB = 0)

90

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Emitter Current

14

A

ICM

Collector Peak Current (tp <10ms)

25

A

IB

Base Current

4

A

IBM

Base Peak Current (tp <10ms)

6

A

Ptot

Total Dissipation at Tc < 25

oC85

W

Ptot

Total Dissipation at Tc < 60

o C65

W

Tstg

Storage Temperature

-65 to +175

oC

Tj

Max. Operating Junction Temperature

175

oC

1

2

3

TO-220

1/4

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