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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BUR51 Fiches technique(PDF) 1 Page - STMicroelectronics |
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BUR51 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM June 1997 1 2 TO-3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 300 V VCEO Collector-Emitter Voltage (IB = 0) 200 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current 60 A ICM Collector Peak Current (tp = 10 ms) 80 A IB Base Current 16 A Ptot Total Dissipation at Tc ≤ 25 oC 350 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC 1/4 |
Numéro de pièce similaire - BUR51 |
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Description similaire - BUR51 |
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