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CSD23382F4.B Fiches technique(PDF) 7 Page - Texas Instruments |
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CSD23382F4.B Fiches technique(HTML) 7 Page - Texas Instruments |
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7 / 14 page ![]() 6 Device and Documentation Support 6.1 Trademarks FemtoFET™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 6.2 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 6.3 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. www.ti.com CSD23382F4 SLPS453E – MAY 2014 – REVISED JANUARY 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 7 Product Folder Links: CSD23382F4 |
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