STPS2L25 datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS2L25

4/9

Figure 7.

Normalized avalanche power

derating versus junction

temperature

Figure 8.

Relative variation of thermal

impedance junction to ambient

versus pulse duration - SMB

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

Single pulse

SMB

Figure 9.

Relative variation of thermal

impedance junction to lead

versus pulse duration - SMB flat

Figure 10.

Reverse leakage current versus

reverse voltage applied (typical

values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-l)

t (s)

Single pulse

SMB flat

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

I (mA)

V (V)

T =125°C

T =150°C

T =100°C

T =25°C

Figure 11.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 12.

Forward voltage drop versus

forward current (typical values)

100

1000

100

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

0.1

1.0

10.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

(A)

(V)

T =25°C

T =125°C

T =150°C

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