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STF13NM50N Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STF13NM50N
Description  N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET
PDF  17 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF13NM50N Fiches technique(HTML) 5 Page - STMicroelectronics

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STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=250V, ID=6A,
RG=4.7Ω, VGS=10V
(see Figure 17)
30
15
40
10
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
12
48
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=12A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, VDD=100V
di/dt = 100A/µs,Tj=25°C
(see Figure 19)
300
3
22
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A,VDD=100V
di/dt=100A/µs,Tj=150°C
(see Figure 19)
370
4
22
ns
µC
A



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