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L6206PD Fiches technique(PDF) 11 Page - STMicroelectronics

No de pièce L6206PD
Description  DMOS dual full bridge driver
PDF  29 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6206PD Fiches technique(HTML) 11 Page - STMicroelectronics

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L6206
Circuit description
29
5
Circuit description
5.1
Power stages and charge pump
The L6206 device integrates two independent power MOS full bridges. Each power MOS
has an Rds(ON) = 0.3  (typical value at 25 °C), with intrinsic fast freewheeling diode. Cross
conduction protection is achieved using a deadtime (td = 1s typical) between the switch off
and switch on of two power MOS in one leg of a bridge.
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped (VBOOT) supply is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in Figure 5. The oscillator output (VCP) is a square wave at 600 kHz (typical) with
10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown
in Table 6.
Figure 5. Charge pump circuit
Table 6. Charge pump external components values
Component
Value
CBOOT
220 nF
CP
10 nF
RP
100
D1
1N4148
D2
1N4148
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328



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