BU326A datasheet(2/4 Pages) STMICROELECTRONICS

No de pièce	BU326A

Description	HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

PDF	4 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

2.33

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 900 V

Tc = 125

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 10 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage(IB =

IC = 100 mA

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2.5 A

IB = 0.5 A

IC = 4 A

IB = 1.25 A

1.5

VBE(sat)

∗ Base-Emitter Saturation

Voltage

IC = 2.5 A

IB = 0.5 A

IC = 4 A

IB = 1.25 A

1.4

1.6

hFE

∗

DC Current Gain

IC = 1 A

VCE = 5 V

ton

Turn-on Time

IC = 2.5 A

IB1 = 0.5 A

VCC = 250 V

0.5

µs

Storage Time

IC = 2.5 A

IB1 = 0.5 A

IB2 = -1A A

VCC = 250 V

3.5

µs

Fall Time

IC = 2.5 A

IB1 = 0.5 A

IB2 = -1A A

VCC = 250 V

0.5

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BU326A

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