BD912 datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	BD912

Description	COMPLEMENTARY SILICON POWER TRANSISTORS

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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BD909/911

BD910/912

COMPLEMENTARY SILICON POWER TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

DESCRIPTION

The BD909 and BD911 are silicon Epitaxial-Base

NPN power transistors mounted in Jedec TO-220

plastic package. They are intented for use in

power linear and switching applications.

The complementary PNP types are BD910 and

BD912 respectively.

INTERNAL SCHEMATIC DIAGRAM

October 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Un it

NPN

BD909

BD911

PNP

BD910

BD912

VCBO

Collector-Base Voltage (IE = 0)

80

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

100

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IE,IC

Collector Current

15

A

IB

Base Current

5

A

Ptot

T otal Dissipation at Tc

≤ 25 oC

90

W

Tstg

Storage Temperat ure

-65 t o 150

o C

Tj

Max. Operating Junction Temperature

150

o C

For PNP types voltage and current values are negative.

1

2

3

TO-220

®

1/6

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