BCY58 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

150

450

°C/W

ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Mi n.

Typ.

Max.

Unit

I CE S

Collector Cutoff Current

(VBE =0)

For BCY58

VCE =32 V

For BCY59

VCE =45 V

T amb =150

°C

T amb =150

°C

0.1

µA

I CE X

Collector Cutoff Current

(VBE = – 0.2 V)

For BCY58

VCE =32 V

For BCY59

VCE =45 V

T amb =100 °C

µA

I EBO

Emitter cutoff Current

(IC =0)

VEB =5 V

V(BR)CE O *

Collector-emitter Breakdown

Voltage (IB =0)

I C = 2 mA

For BCY58

For BCY59

(BR)EBO *

Emitter-base Breakdown Voltage

(IC =0)

I E =10 µA7

VCE(sat)*

Collector-Emitter Saturation

Voltage

I C =10 mA

I C =100 mA

I B = 0.25 mA

I B = 2.5 mA

0.12

0.4

0.35

0.7

VBE

Base-emitter Voltage

IC =2 mA

I C =100 mA

VCE =5 V

VCE =1 V

0.55

0.65

0.75

0.7

VBE( sat)*

Base-emitter Saturation Voltage

IC =10 mA

I C =100 mA

I B = 0.25 mA

I B = 2.5 mA

0.6

0.75

0.7

0.9

0.85

1.2

h FE*

DC Current Gain

I C =10

µA

I C =2 mA

I C =10 mA

I C =100 mA

VCE =5 V

Gr.VII

Gr.VIII

Gr.IX

Gr.X

VCE =5 V

Gr.VII

Gr.VIII

Gr.IX

Gr.X

VCE =1 V

Gr.VII

Gr.VIII

Gr.IX

Gr.X

VCE =1 V

Gr.VII

Gr.VIII

Gr.IX

Gr.X

100

120

180

250

380

120

160

240

195

100

140

195

280

350

170

250

350

500

365

175

260

365

520

630

220

310

460

630

Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

BCY58-BCY59

2/6

BCY58 Fiches technique(PDF) 2 Page - STMicroelectronics

BCY58 Fiches technique(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL