AM81214-015 datasheet(1/4 Pages) STMICROELECTRONICS

No de pièce	AM81214-015

Description	L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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L-BAND RADAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.310 x . 310 2LFL (S064)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

5:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 14.5 W MIN. WITH 8.6 dB GAIN

DESCRIPTION

The AM81214-015 device is a high power Class C

transistor specifically designed for L-Band Radar

pulsed output and driver applications.

This device is capable of operation over a wide range

of pulse widths, duty cycles, and temperatures and

is capable of withstanding 5:1 output VSWR at rated

RF conditions. Low RF thermal resistance and com-

puterized automatic wire bonding techniques ensure

high reliability and product consistency.

AM81214-015 is supplied in the grounded IMPAC

™

Hermetic Metal/Ceramic package with internal

input/output matching structures.

PIN CONNECTION

BRANDING

81214-15

ORDER CODE

AM 81214-015

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 100°C)

37.5

W

IC

Device Current*

1.8

A

VCC

Collector-Supply Voltage*

32

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

4.0

°C/W

*Applies only to rated RF amplifier operation

AM81214-015

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

August 1992

1/4

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