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STM32F412RGU3P Fiches technique(PDF) 112 Page - STMicroelectronics |
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STM32F412RGU3P Fiches technique(HTML) 112 Page - STMicroelectronics |
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112 / 201 page ![]() Electrical characteristics STM32F412xE/G 112/201 DocID028087 Rev 7 Figure 31. ACCHSI versus temperature 1. Guaranteed by characterization, not tested in production. Low-speed internal (LSI) RC oscillator Figure 32. ACCLSI versus temperature Table 44. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = -40 to 125 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed by characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA |
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