Silicon NPN Power Transistor

3DD159

www.iscsemi.com

2

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 0.25A

--

--

1.2

V

VBE(sat)

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 0.25A

--

--

1.5

V

ICEO

Collector Cutoff Current

VCE= VCEO(A、B、C、D、

E、F); IE= 0A

--

--

1

mA

hFE

DC Current Gain

IC= 2.5A; VCE= 5V

15

--

120

--

PACKAGE OUTLINE (UNIT: MM):

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