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2SD601A Fiches technique(PDF) 2 Page - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

No de pièce 2SD601A
Description  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Fabricant  GALAXY-MICRO [CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.]
Site Internet  https://www.gmesemi.com/en/
Logo GALAXY-MICRO - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

2SD601A Fiches technique(HTML) 2 Page - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

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Production specification
Silicon Epitaxial Planar Transistor
2SD601A
C116
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
60
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=2mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=10V,IC=0
100
μA
DC current gain
hFE
VCE=10V,IC=2mA
VCE=2V,IC=100mA
160
90
460
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.1
0.3
V
Transition frequency
fT
VCB=10V, IE= -2mA,
f=200MHz
150
MHz
Output capacitance
Cob
VCB=10V, IE=0,f=1MHz
3.5
pF
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
hFE1
160-260
210-340
290-460
Marking
ZQ
ZR
ZS



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