2N6036 datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	2N6036

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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2N6036

2N6039

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

s

2N6036 IS A SGS-THOMSON PREFERRED

SALESTYPE

s

COMPLEMENTARY PNP - NPN DEVICES

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

GENERAL PURPOSE SWITCHING

s

GENERAL PURPOSE AMPLIFIER

DESCRIPTION

The 2N6036 and 2N6039 are complementary

silicon power Darlington transistors mounted in

Jedec SOT-32 plastic package.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

PNP

2N6036

NPN

2N6039

VCBO

Collector-Base Voltage (IE =0)

80

V

VCEO

Collector-Emit ter Voltage (IB =0)

80

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collector Current

4

A

ICM

Collector Peak Current

8

A

IB

Base Current

0.1

A

Ptot

Tot al Dissipation at Tc

≤ 25 oC40

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. O perat ing Junction Temperature

150

oC

For PNP types voltage and current values are negative.

3

2

1

SOT-32

R1 Typ. = 7 K

Ω

R2 Typ. = 230

Ω

1/6

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STMicroelectronics	2N6036	174Kb / 4P	MIDIUM POWER DAR;OMGTONS Jan-1989
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