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Z00607MA5BL2 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce Z00607MA5BL2
Description  Standard 0.8 A Triacs
PDF  7 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

Z00607MA5BL2 Fiches technique(HTML) 3 Page - STMicroelectronics

  Z00607MA5BL2 Datasheet HTML 1Page - STMicroelectronics Z00607MA5BL2 Datasheet HTML 2Page - STMicroelectronics Z00607MA5BL2 Datasheet HTML 3Page - STMicroelectronics Z00607MA5BL2 Datasheet HTML 4Page - STMicroelectronics Z00607MA5BL2 Datasheet HTML 5Page - STMicroelectronics Z00607MA5BL2 Datasheet HTML 6Page - STMicroelectronics Z00607MA5BL2 Datasheet HTML 7Page - STMicroelectronics  
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Z00607
Characteristcs
3/7
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W)
I
(A)
T(RMS)
-40
-20
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
I, I , I [T ] /
GTHL
j
I
, I , I [T =25°C]
GTHL
j
T (°C)
j
IGT
IH &IL
Figure 3.
Surge peak on-state current versus
number of cycles
Figure 4.
Non-repetitive surge peak
on-state current for a sinusoidal
pulse with width tp < 10 ms and
corresponding value of I2t
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
One cycle
t=20ms
I
(A)
TSM
Number of cycles
Non repetitive
T initial = 25°C
j
Repetitive
T
= 25°C
amb
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
200.0
t (ms)
p
I
(A), I t (A s)
TSM
22
It
2
dI/dt limitation:
20A/µs
T initial = 25°C
j
ITSM
Figure 5.
On-state characteristics
(maximum values)
Figure 6.
Relative variation of critical rate
of decrease of main current versus
(dV/dt)c (typical values)
I
(A)
TM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
V
(V)
TM
T =
max.
j
Tj
T = 25°C
j
T =max.
j
V =0.95 V
R =420 m
t0
d
Ω
0.1
1.0
10.0
0.0
2.0
4.0
6.0
8.0
10.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dV/dt)c (V/µs)



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