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TLN233F Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TLN233F Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() TLN233(F) 2007-10-01 2 Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 100 mA ⎯ 1.6 2.0 V Reverse current IR VR = 4 V ⎯ ⎯ 60 μA Radiant intensity IE IF = 50 mA 46 80 ⎯ mW/sr Radiant power PO IF = 50 mA ⎯ 30 ⎯ mW Cut-off frequency fc IF = 50 mA + 5 mAP-P (Note 3) ⎯ 15 ⎯ MHz Peak emission wavelength λP IF = 50 mA ⎯ 870 ⎯ nm Half-angle value θ 2 1 IF = 50 mA ⎯ ±13 ⎯ ° Note 3: This is the frequency when modulation light power decreases by 3 dB from 1 MHz. Handling Precautions • Soldering must be performed under the stopper. • When forming the leads, bend each lead at least 5 mm from the package body. Soldering must be performed after the leads have been formed. • The radiant intensity decreases over time due to current flowing in the infrared LED. When designing circuits, take into account the change in radiant intensity over time. The change in radiant intensity is equal to the reciprocal of the change in LED infrared optical output: P (0) o P (t) o I (0) E I (t) E = . |
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