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ISL73847SEHDEMO2Z Fiches technique(PDF) 34 Page - Renesas Technology Corp

No de pièce ISL73847SEHDEMO2Z
Description  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z Fiches technique(HTML) 34 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 34
Jan 31, 2025
ISL73041SEH Datasheet
8.
Die and Assembly Characteristics
Table 2. Die and Assembly Related Information
Die Information
Dimensions
2794µm x 2794µm (110 mils x 110 mils)
Thickness: 305µm ±25µm (12 mils ±1 mil)
Interface Materials
Glassivation
Type: Silicon dioxide and silicon nitride
Thickness: 18.5kA ±10% dioxide; 6kA ±10% nitride
Top Metalization
Type: Al 99.5%, Cu 0.5%
Thickness: 2.85µm ±0.15µm
Backside Finish
Silicon
Process
0.25µm BiCMOS
Assembly Information
Substrate and Package Lid Potential
Internal connection to the four EPAD (SGND)
Additional Information
Transistor Count
5737
Weight of Packaged Device
0.36g
Lid Characteristics
Finish: Gold
Lid Potential: Connected to SGND pin



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