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BULD741 Fiches technique(PDF) 1 Page - STMicroelectronics |
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BULD741 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() July 2007 Rev 2 1/11 11 Table 1. Device summary Order codes Marking Package Packaging BULD741T4 BULD741 DPAK Tape & reel BULD741-1 BULD741 IPAK Tube BULD741 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Figure 1. Internal schematic diagram DPAK 1 3 3 2 1 IPAK TO-252 TO-251 www.st.com |
Numéro de pièce similaire - BULD741 |
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Description similaire - BULD741 |
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