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ISL73096RHX/SAMPLE Fiches technique(PDF) 8 Page - Renesas Technology Corp

No de pièce ISL73096RHX/SAMPLE
Description  Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
PDF  11 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73096RHX/SAMPLE Fiches technique(HTML) 8 Page - Renesas Technology Corp

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ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
FN6475 Rev 4.00
Page 8 of 11
June 27, 2014
Die Characteristics
DIE DIMENSIONS:
52.8 mils x 52.0 mils x 14 mils ±1 mil
1340µm x 1320µm x 355.6µm ±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
Å 0.5kÅ
Top Metallization:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8k
Å ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16k
Å ±0.8kÅ
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
3.04 x 105A/cm2
Transistor Count:
5
Metallization Mask Layout
FIGURE 13. ISL73096RH, ISL73096EH
FIGURE 14. ISL73127RH, ISL73127EH
(1) Q1C
(2) Q2C
(3) Q2E
(4) Q2B
(5) NC
(6) Q3C
(7) Q3E
(8) Q3B (9) Q4B (10) Q4E
(11) Q4C
(12) Q5C
(13) Q5E
(14) Q5B
(15) Q1B
(16) Q1E



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