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JDP2S05FS Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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JDP2S05FS Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() JDP2S05FS 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS UHF~VHF Band RF Switch Applications • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.5 Ω (typ.) • Low capacitance: CT = 0.32 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 20 V Forward current IF 50 mA Power dissipation(Note:1) Pd 150 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: When mounted on glass epoxy board board size : 20mm × 20mm × 1.6mmt Cu foot area : 4mm × 4mm × 0.035mmt Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 0.1μA 20 ― ― V Reverse current IR VR = 20 V ― ― 0.1 μA Forward voltage VF IF = 50 mA ― ― 0.94 V Capacitance(Note2) CT VR = 1 V, f = 1 MHz 0.21 0.32 0.42 pF Series resistance rs IF = 1 mA, f = 100 MHz ― 1.5 2.2 Ω Note2: Signal level when capacitance is measured. Vsig = 100 mVrms Marking JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.0006 g(Typ.) 3 Unit:mm 0.6±0.05 0.2 ±0.05 A 0.48 +0.02 -0.03 0.1±0.05 |
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