RN4606 datasheet(1/5 Pages) TOSHIBA

No de pièce	RN4606

Description	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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1 / 5 page

RN4606

2007-11-01

1

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4606

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in SM6 (super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 4.7kΩ

R2: 47kΩ

(Q1, Q2 Common)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−100

mA

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

100

mA

JEDEC

―

EIAJ

―

TOSHIBA

2-3N1A

Weight: 0.015g

Unit in mm

Numéro de pièce similaire - RN4606

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	RN4606	159Kb / 4P	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

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