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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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GD600HTX65P4S Fiches technique(PDF) 1 Page - StarPower Europe AG |
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GD600HTX65P4S Fiches technique(HTML) 1 Page - StarPower Europe AG |
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1 / 10 page  GD600HTX65P4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 1/10 Preliminary STARPOWER SEMICONDUCTOR IGBT GD600HTX65P4S 650V/600A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicles. Features Low VCE(sat) Trench IGBT technology Low switching losses VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper pinfin baseplate using DBC technology Typical Applications Hybrid and electric vehicles Inverter for motor drive Uninterruptible power supply Equivalent Circuit Schematic |
Numéro de pièce similaire - GD600HTX65P4S |
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Description similaire - GD600HTX65P4S |
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