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TPS830F Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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TPS830F Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TPS830(F) 2007-10-01 3 Note 4: Burst wave Note 5: Electromagnetic sensitivity Mount the device between two parallel boards separated by a distance of d. Apply voltages modulated using frequencies ranging from 10kHz to 50MHz across the boards and read off the voltage at which noise is generated in the output from the device. (*) Usage in strong electromagnetic fields may affect the device. Please evaluate product in this type of environment before releasing them for actual use. Note 6: Radiation angle VCC GND 30μs 55μs TON TOFF VOH VOL 2.5V Carrier frequency:fo = 455kHz Duty = 50% Standard transmitter L/2 L/2 L θ θ ES = VP/d (VP-P / m) d VP 50Ω TPS830(F) |
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