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TPCP8301 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPCP8301
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
PDF  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8301 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPCP8301
2006-11-17
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
84.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
101.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
215.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
347.2
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −5 A
Note 5: Repetitive rating: Pulse width limited by Max. Channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
25.4
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)



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