TPCP8H02 datasheet(2/8 Pages) TOSHIBA

No de pièce	TPCP8H02

Description	TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

PDF	8 Pages

Scroll/Zoom	100%

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2 / 8 page

TPCP8H02

2006-11-13

Common Absolute Maximum Rating (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Storage temperature range

Tstg

−55 to 150

°C

Marking (Note 4)

Note 4: The mark ” ” on the lower left of the marking indicates Pin 1.

Weekly code (three digits)

Electrical Characteristics (Ta = 25°C)

Transistor

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

⎯

100

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

⎯

100

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

⎯

hFE (1)

VCE = 2 V, IC = 0.3 A

250

⎯

400

DC current gain

hFE (2)

VCE = 2 V, IC = 1.0 A

120

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 1.0 A, IB = 33 mA

⎯

140

Base-emitter saturation voltage

VBE (sat)

IC = 1.0 A, IB = 33 mA

⎯

1.1

Collector output capacitance

Cob

VCB = 10V, IE = 0, f=1MHz

⎯

Rise time

⎯

Storage time

tstg

⎯

320

⎯

Switching time

Fall time

See Figure 1 circuit diagram.

VCC ≒ 12 V, RL = 12 Ω

IB1 = -IB2 = 33 mA

⎯

8H02

Type

Lot No.

(Weekly code)

Week of manufacture

(01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture

(Last digit of the calendar year)

IB2

IB1

μs

Output

Input

IB2

IB1

VCC

Duty cycle

< 1%

Figure 1 Switching Time Test Circuit & Timing Chart

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