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FS5AS-3 Fiches technique(PDF) 2 Page - Powerex Power Semiconductors

No de pièce FS5AS-3
Description  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Fabricant  POWEREX [Powerex Power Semiconductors]
Site Internet  http://www.pwrx.com
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FS5AS-3 Fiches technique(HTML) 2 Page - Powerex Power Semiconductors

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-3
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
101
2
3
2
3
5
7
100
2
3
5
7
10–1
2
3
5
7
101
57
2
102
35 7
2
103
35 7
23
2
tw = 10
ms
TC = 25°C
Single Pulse
100
ms
10ms
1ms
DC
10V
0
2
4
6
8
10
0
1.0
2.0
3.0
4.0
5.0
VGS = 20V
7V 6V
5V
4V
TC = 25°C
Pulse Test
PD = 30W
10V
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
VGS = 20V
7V 6V
5V
4V
TC = 25°C
Pulse Test
PERFORMANCE CURVES
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.28
0.56
6.5
600
100
30
18
18
30
15
1.0
—
85
—
±0.1
0.1
4.0
0.38
0.76
—
—
—
—
—
—
—
—
1.5
4.17
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
VGS =
±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 2A, VGS = 10V, RGEN = RGS = 50
Ω
IS = 2A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –100A/
µs



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