STP7NB60FP datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

STP7NB60/FP

2/11

Table 3. Absolute Maximum Ratings

Note: 1. Pulse width limited by safe operating area

2. ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Table 4. Thermal Data

Table 5. Avalanche Characteristics

Symbol

Parameter

Value

Unit

STP7NB60

STP7NB60FP

VDS

Drain-source Voltage (VGS = 0)

600

VDGR

Drain- gate Voltage (RGS = 20 kΩ)

600

VGS

Gate-source Voltage

± 30

Drain Current (cont.) at TC = 25 °C

7.2

4.1

Drain Current (cont.) at TC = 100 °C

4.5

2.6

IDM

(1)

Drain Current (pulsed)

28.8

Ptot

Total Dissipation at TC = 25 °C

125

Derating Factor

1.0

0.32

W°/C

dv/dt (2)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

–

2000

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

TO-220

TO220-FP

Rthj-case

Thermal Resistance Junction-case

Max

1.0

3.13

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, δ < 1%)

7.2

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

580

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