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GD50FSX65L2S Fiches technique(PDF) 2 Page - StarPower Europe AG |
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GD50FSX65L2S Fiches technique(HTML) 2 Page - StarPower Europe AG |
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2 / 9 page ![]() GD50FSX65L2S IGBT Module ©2021 STARPOWER Semiconductor Ltd. 2/9/2021 2/9 A01 Absolute Maximum Ratings T C=25 oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter Voltage 650 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TC=25 oC @ TC=100 oC 89 50 A ICM Pulsed Collector Current tp=1ms 100 A PD Maximum Power Dissipation @ Tj=175 oC 258 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse Voltage 650 V IF Diode Continuous Forward Current 50 A IFM Diode Maximum Forward Current tp=1ms 100 A Module Symbol Description Value Unit Tjmax Maximum Junction Temperature 175 oC Tjop Operating Junction Temperature -40 to +150 oC TSTG Storage Temperature Range -40 to +125 oC VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V |
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