CT60AM datasheet(2/2 Pages) POWEREX

2 / 2 page

Sep. 2000

ICES

IGES

VGE(th)

VCE(sat)

Cies

Coes

Cres

td(on)

td(off)

Etail

Itail

VEC

trr

Rth(j-c)

µA

µs

mJ/pls

µs

°C/W

°C/w

—

2.0

—

4.0

2.1

4400

115

0.05

0.1

0.2

0.6

2.2

0.5

—

1.0

0.5

6.0

2.7

—

1.0

3.0

2.0

0.69

4.0

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Collector cutoff current

Gate leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on deray time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Tail loss

Tail current

Emitter-collector voltage

Diode reverse recovery time

Thermal resistance (IGBT)

Thermal resistance (Diode)

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

VCE = 900V, VGE = 0V

VGE = ±20V, VCE = 0V

VCE = 10V, IC = 6mA

IC = 60A, VCE = 15V

VCE = 25V, VGE = 0V, f = 1MHz

VCC = 300V, IC = 60A, VGE = 15V, RG = 10

Ω

ICP = 60A, Tj = 125°C, dv/dt = 200V/

µs

IE = 60A, VGE = 0V

IE = 60A, dis/dt = –20A/

µs

Junction to case

MITSUBISHI Nch IGBT

CT60AM-18F

INSULATED GATE BIPOLAR TRANSISTOR

CT60AM Fiches technique(PDF) 2 Page - Powerex Power Semiconductors

CT60AM Fiches technique(HTML) 2 Page - Powerex Power Semiconductors

Html Pages

1 2

Fiches technique Télécharger

Lien URL