IRG4CC10KB datasheet(1/1 Pages) IRF

No de pièce	IRG4CC10KB

Description	IRG4CC10KB IGBT Die in Wafer Form

PDF	1 Pages

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Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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IRG4CC10KB

IRG4CC10KB IGBT Die in Wafer Form

600 V

Size 1

Ultra-Fast Speed

Short Circuit Rated

6" Wafer

12\4\98

Nominal Backmetal Composition, Thickness:

Cr-NiV-Ag (1 kA-2kA-2.5kA )

Nominal Front Metal Composition, Thickness:

99% Al, 1% Si (4 microns)

Dimensions:

.080" x .120"

Wafer Diameter:

150mm, with std. < 100 > flat

Wafer thickness:

.015" + / -.003"

Relevant Die Mechanical Dwg. Number

01-5274

Minimum Street Width

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Ink Dot Location

Consistent throughout same wafer lot

Recommended Storage Environment:

Store in original container, in dessicated

nitrogen, with no contamination

Recommended Die Attach Conditions

For optimum electrical results, die attach

temperature should not exceed 300C

Mechanical Data

Die Outline

Reference Standard IR packaged part ( for design ) : IRG4BC10K

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

VCE (on)

Collector-to-Emitter Saturation Voltage

4.5V Max.

IC = 1.5A, TJ = 25°C, VGE = 15V

V(BR)CES

Colletor-to-Emitter Breakdown Voltage

600V Min.

TJ = 25°C, ICES = 250µA, VGE = 0V

VGE(th)

Gate Threshold Voltage

3.0V Min., 6.5V Max.

VGE = VCE , TJ =25°C, IC =250µA

ICES

Zero Gate Voltage Collector Current

250µA Max.

TJ = 25°C, VCE = 600V

IGES

Gate-to-Emitter Leakage Current

± 1.1µA Max.

TJ = 25°C, VGE = +/- 20V

Electrical Characteristics ( Wafer Form )

E

C

G

PD- 91825

www.irf.com

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