2SC3405

2010-02-05

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC3405

Switching Regulator and High Voltage Switching

Applications

High Speed DC-DC Converter Applications

• Excellent switching times: tr = 1.0 μs (max)

tf = 1.0 μs (max), (IC = 0.3 A)

• High collector breakdown voltage: VCEO = 800 V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

900

V

Collector-emitter voltage

VCEO

800

V

Emitter-base voltage

VEBO

8

V

DC

IC

0.8

Collector current

Pulse

ICP

1.5

A

Base current

IB

0.2

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

PC

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)