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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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AT737 Fiches technique(PDF) 1 Page - Power Semiconductors |
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AT737 Fiches technique(HTML) 1 Page - Power Semiconductors |
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1 / 4 page  PHASE CONTROL THYRISTOR AT737 Repetitive voltage up to 2000 V Mean on-state current 3240 A Surge current 50.4 kA FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2000 V V RSM Non-repetitive peak reverse voltage 125 2100 V V DRM Repetitive peak off-state voltage 125 2000 V I RRM Repetitive peak reverse current V=VRRM 125 200 mA I DRM Repetitive peak off-state current V=VDRM 125 200 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 3240 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 2545 A I TSM Surge on-state current sine wave, 10 ms 125 50.4 kA I² t I² t without reverse voltage 12701 x1E3 A²s V T On-state voltage On-state current = 6300 A 25 1.65 V V T(TO) Threshold voltage 125 0.95 V r T On-state slope resistance 125 0.127 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 3550 A, gate 10V 5ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25 3 µs tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 320 µs Q rr Reverse recovery charge di/dt=-20 A/µs, I= 2330 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=5V 25 3.5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 2 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 11 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 2 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 40.0 / 50.0 kN Mass 1700 g ORDERING INFORMATION : AT737 S 20 standard specification VDRM&VRRM/100 Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori |
Numéro de pièce similaire - AT737 |
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Description similaire - AT737 |
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