BC337 datasheet(2/2 Pages) DIOTEC

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BC337 / BC338

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VCE = 1 V, IC = 300 mA,

VBE

–

1.2 V

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 45 V, (B-E short)

VCE = 25 V, (B-E short)

BC337

BC338

ICES

–

2 nA

100 nA

VCE = 45 V, Tj = 125°C, (B-E short)

VCE = 25 V, Tj = 125°C, (B-E short)

BC337

BC338

ICES

–

10 µA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 50 MHz

–

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

12 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 200 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC327 / BC328

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC337-16

BC337-25

BC337-40

BC338-16

BC338-25

BC338-40

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

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[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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