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HS3JB Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HS3JB Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() Dimensions in inches and (millimeters) Version: A06 HS3AB - HS3MB 3.0 AMPS. High Efficient Surface Mount Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .012(.31) .006(.15) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .103(2.61) .078(1.99) .209(5.30) .201(5.10) Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260oC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V0 Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 gram Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HS 3AB HS 3BB HS 3DB HS 3FB HS 3GB HS 3JB HS 3KB HS 3MB Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 3.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Instantaneous Forward Voltage @ 3.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 10 250 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 75 nS Typical Junction Capacitance ( Note 2 ) Cj 80 50 pF Operating Temperature Range TJ -55 to +150 oC Storage Temperature Range TSTG -55 to +150 oC Notes: 1. Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied V R=4.0 Volts. 3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area. |
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